Barrier height

φ_B

V

Base doping density

N_B

m^-3

Base voltage

V_B

V

Base width

w_B

m

Body effect parameter

γ

V^1/2

Boltzmann's constant

k

J/K

Built-in potential of a p-n diode or Schottky diode

φ_i

V

Bulk potential

φ_F

V

Capacitance per unit area

C

F/m²

Charge

Q

C

Charge density per unit area at threshold in the depletion layer of an MOS structure

Q_d,T

C/m²

Charge density per unit area in the depletion layer of an MOS structure

Q_d

C/m²

Charge density per unit volume

ρ

C/m³

Charge density per unit volume in the oxide

ρ_ox

C/m³

Collector doping density

N_C

m^-3

Collector voltage

V_C

V

Collector width

w_C

m

Conduction band energy of a semiconductor

E_c

Joule

Conductivity

σ

Ω^-1m^-1

Current

I

A

Current density

J

A/m²

Current gain

β

Density of states in the conduction band per unit energy and per unit volume

g_c(E)

m^-3J^-1

Density of states in the valence band per unit energy and per unit volume

g_v(E)

m^-3J^-1

Depletion layer width

w

m

Depletion layer width in a p-type semiconductor

x_p

m

Depletion layer width in an MOS structure

x_d

m

Depletion layer width in an MOS structure at threshold

x_d,T

m

Depletion layer width in an n-type semiconductor

x_n

m

Dielectric constant of the oxide

ε_ox

F/m

Dielectric constant of the semiconductor

ε_s

F/m

Distribution function (probability density function)

f(E)

Donor doping density

N_d

m^-3

Donor energy

E_d

Joule

Doping density

N

Drain voltage

V_D

V

Effective density of states in the conduction band

N_c

m^-3

Effective density of states in the valence band

N_v

m^-3

Effective mass of electrons

m_e^*

kg

Effective mass of holes

m_h^*

kg

Electric field

E

V/m

Electron affinity of the semiconductor

χ

V

Electron current density

J_n

A/m²

Electron density

n

m^-3

Electron density in thermal equilibrium

n₀

m^-3

Electron density per unit energy and per unit volume

n(E)

m^-3

Electron diffusion constant

D_n

m²/s

Electron diffusion length

L_n

m

Electron energy in vacumm

E_vacuum

Joule

Electron generation rate

G_n

m^-3s^-1

Electron lifetime

τ_n

s

Electron mobility

μ_n

m²/V-s

Electron recombination rate

R_n

m^-3s^-1

electronic charge

q

C

Emitter doping density

N_E

m^-3

Emitter efficiency

γ_E

Emitter voltage

V_E

V

Emitter width

w_E

m

Energy

E

Joule

Energy bandgap of a semiconductor

E_g

Joule

Excess electron charge density in the base

ΔQ_n,B

C/m²

Excess electron density

δ _n

m^-3

Excess hole density

δ _p

m^-3

Fermi energy (thermal equilibrium)

E_F

Joule

Flatband capacitance per unit area of a MOS structure

C_FB

F/m²

Flatband voltage

V_FB

V

Free electron mass

m₀

kg

Gate voltage

V_G

V

Hole current density

J_p

A/m²

Hole density

p

m^-3

Hole density in an n-type semiconductor

p_n

m^-3

Hole density in thermal equilibrium

p₀

m^-3

Hole density per unit energy

p(E)

m^-3

Hole diffusion constant

D_p

m²/s

Hole diffusion length

L_p

m

Hole generation rate

G_p

m^-3s^-1

Hole lifetime

τ_p

s

Hole mobility

μ_p

m²/V-s

Hole recombination rate

R_p

m^-3s^-1

Interface charge density per unit area

Q_I

C/m²

Intrinsic carrier density

n_I

m^-3

Intrinsic carrier density

n_I

m^-3

Intrinsic Fermi energy

E_I

Joule

Ionized acceptor density

N_a^-

m^-3

Ionized donor density

N_d⁺

m^-3

Junction capacitance per unit area

C_j

F/m²

Junction depth

x_j

m

Length

L

m

Mass

m

kg

Mean free path

l

m

Net recombination rate of electrons

U_n

m^-3s^-1

Net recombination rate of holes

U_p

m^-3s^-1

Oxide capacitance per unit area

C_ox

F/m²

Oxide thickness

t_ox

m

Plank's constant

h

Js

Position

x

m

Potential

φ

V

Potential at the semiconductor surface

φ_s

V

Quasi-Fermi energy of electrons

F_n

Joule

Quasi-Fermi energy of holes

F_p

Joule

Reduced Plank's constant (= h/2π)

Js

Resistance

R

Ω

Resistivity

ρ

Ωm

Speed of light in vacuum

c

m/s

Temperature

T

Kelvin

Thermal velocity

v_th

m/s

Thermal voltage

V_t

V

Thickness

t

m

Threshold voltage of an MOS structure

V_T

V

Transport factor

α

Valence band energy of a semiconductor

E_v

Joule

Velocity

v

m/s

Width of a p-type region

w_p

m

Width of an n-type region

w_n

m

Workfunction difference between the metal and the semiconductor

Φ_MS

V

Workfunction of the metal

Φ_M

V

Workfunction of the semiconductor

Φ_S

V